An improved numerical model for computing the displacement defect density, the damage constants for the minorityhyphen;carrier diffusion lengths and the degradations of the shorthyphen;circuit currentIsc, openhyphen;circuit voltageVoc, and the conversion efficiency eegr;cin a proton irradiated (AlGa)Ashyphen;GaAs solar cell is presented in this paper. The model assumed that the radiationhyphen;induced displacement defects form effective recombination centers which reduces the minorityhyphen;carrier diffusion length and hence degrades theIsc,Voc, and eegr;cof the solar cell. Excellent agreement was obtained between our calculated values and the measuredIsc,Voc, and eegr;cin the proton irradiated GaAs solar cells for proton energies varying from 100 keV to 10 MeV and fluences from 1010to 1012cmminus;2under normal incidence condition.
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