In this study, with the use of a sensitive optical technique, we demonstrate the possibility of measuring the depth distribution of damage in GaAs that is generated by various ionhyphen;assisted processes such as ion implantation and ion assisted plasma etching. We have used this technique to measure the depth distribution of damage in both He and Ar implanted GaAs and in inert gas and reactive ion etched GaAs. The sensitivity of the technique allowed us to measure damage profiles over a large range of ion energies and ion doses. We have also confirmed previously published results indicating that damage created by sputter etching is inversely proportional to the mass of the ions used in the etching process.
展开▼
