A novel fieldhyphen;effect mobility measurement on a gateless InGaAs/InAlAs heterojunction in a parallel magnetic field

摘要

A technique for measuring the fieldhyphen;effect mobility of a gateless In0.53Ga047As/In0.52Al0.48As heterojunction has been developed by using the nonpersistent photoconductive effect. Subband depopulation in a parallel magnetic field is consistent with the lsquo;lsquo;universalrsquo;rsquo; depopulation observed in InAs, InSb, and HgCdTe metalhyphen;oxidehyphen;semiconductor fieldhyphen;effect transistors.