Strainhyphen;assistedphyphen;type doping of IIhyphen;VI semiconductors

摘要

By incorporating a IIhyphen;VI semiconductor into a strainedhyphen;layer superlattice, it should be possible to overcome the effects of deep hole traps near the valencehyphen;band edge and hence to dope the semiconductorptype in many cases. This idea is illustrated for CdTe/ZnTe superlattices.