Theoretical temperature dependence of thinhyphen;film transistors with traps

摘要

The temperature dependence of CdS thinhyphen;film transistors with exponentially and uniformly distributed traps in the semiconductor is studied. The theory showed that the logarithm of mobility is linearly dependent upon the reciprocal of temperature. According to the theory, the mobility was gate voltage sensitivemdash;mobility increasing with gate voltage. Also, mobility values were reduced for TFTrsquo;s with higher trap densities as expected. These results are consistent with previous experimental observations and results. Additionally, the variation of drain current with temperature was found to be in good agreement with experiment.