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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Direct Atomic Layer Deposition of Ternary Ferrites with Various Magnetic Properties
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Direct Atomic Layer Deposition of Ternary Ferrites with Various Magnetic Properties

机译:Direct Atomic Layer Deposition of Ternary Ferrites with Various Magnetic Properties

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摘要

A number of applications involving magnetic phenomena require a thin, smooth and oonformal magnetic layer fabricated at low temperature, either as a film or within a more complex nanostructure: spintronics, sensing, magnetic storage, and magneto-optics. For this, atomic layer deposition (ALD) would be ideally suited. Indeed, ALD is a thin film technique in which the substrate is alterna-tively exposed to several gaseous reactants and a smooth conformal film is thereby deposited in layer-by-layer fashion, independently of the substrate's geometric com-plexity,Despite this", no ALD reaction of ferro- or ferri-rnagnetic materials is available to date that simultaneously possesses the following practical advantages: (1) room-temperature ferro-or ferrimagnetism Of the film without further thermal treatment, (2) air stability of the material, (3) usr of commonly available precursors, and (4) fast (≥0.2 A/cycle ) growth of smooth films.

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