Calculation of hole mobility in doped SiGe alloys using a Monte Carlo method with a bond orbital band structure

摘要

Hole mobility in strained Si1minus;xGex/Si(001) layers is calculated as functions of temperature and doping concentration for various Ge contents using a Monte Carlo technique. In the Monte Carlo simulation, the band structure is computed by using a bond orbital model, which combines theksdot;pand the tighthyphen;binding methods with a strain Hamiltonian. The Fermindash;Dirac distribution is employed for heavily doped impurity scattering. The alloy interaction potential of 1.0 eV for the Monte Carlo model is obtained by fitting the measured velocityhyphen;field characteristics in strained Si1minus;xGexalloys. The calculated hole mobilities compare well with experimental results. The strain effect on hole transport is also evaluated. thinsp;