Low dark‐current MOS photodiodes using GaAs0.6P0.4

摘要

Anodic oxides have been grown onn‐type GaAs0.6P0.4and MOS capacitors have been fabricated. The thermal generation rate of minority carriers, and therefore the dark current, is very small in this material. Consequently, MOS photosensors typically have storage times of 500 sec but can be read out in submillisecond times by pulsing into accumulation. The intrinsic quantum efficiency of these structures is about unity and applications to sample‐and‐hold and low‐light‐level devices are suggested.