Silicon doublehyphen;injection electrohyphen;optic modulator with junction gate control

摘要

Novel structures for carrierhyphen;induced electrohyphen;optical phase modulation in crystalline silicon are examined. A new dualhyphen;injection fieldhyphen;effect transistor structure for guidedhyphen;wave light modulation at 1.3 mgr;m is proposed and analyzed. It consists of an elongated cathodehyphen;anodehyphen;gate structure integrated in a rib waveguide. Dualhyphen;gate and singlehyphen;gate control are considered. The overlap between the plasma charge density and the optical guided mode is computed. For a cathodehyphen;anode voltage of 0.32 V, the effective refractive index of the waveguide mode changes by Dgr;N=1times;10minus;3when the gate voltage is altered by 12 V. Numerical estimates of the bias current, pinchoff voltage, interaction length, and modulator speed are given.