We report on the measurement of the diffusion length damage coefficient (KL) and the annealing characteristics of the minority carrier diffusion length (Ln) in Czochralskihyphen;grown zinchyphen;doped indium phosphide (InP), with a carrier concentration of 1times;1018cmminus;3. In measuringKL, irradiations were made using 0.5 MeV protons with fluences ranging from 1times;1011to 3times;1013cmminus;2. Prehyphen;and posthyphen;irradiation electronhyphen;beam induced current measurements allowed for the extraction ofLn, from whichKLwas determined. In studying the annealing characteristics ofLn, irradiations were made with 2 MeV protons with a fluence of 5times;1013cmminus;2. Posthyphen;irradiation studies ofLnwith time at room temperature, and with minority carrier photoinjection and forwardhyphen;bias injection were carried out. The results showed that recovery under Air Mass Zero photoinjection was complete.Lnwas also found to recover under forwardhyphen;bias injection, where recovery was found to depend on the value of the injection current. However, no recovery ofLnafter proton irradiation was observed with time at room temperature, in contrast to the behavior of 1 MeV electronhyphen;irradiated InP solar cells reported previously.
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