An effect of injected charge carrier accumulation (depletion) at the intervalley crossover of a graded semiconductor has been reported. We proved that an abrupt change in electron mobility in the vicinity of the intervalley crossover was primarily responsible for this effect, whereas a change in the quasielectric field had only a slight effect on the injected carrier coordinate distribution. Photoconductivity spectra were found to be a convenient way of investigating the charge carrier profile in graded structures. The experimental spectra of the diode structures based on a graded AlxGa1−xAs alloy compound have been found in satisfactory agreement with theoretical predictions.
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