Epitaxial ternary RexMo1minus;xSi2thin films on Si(100)

摘要

Reactive deposition epitaxy was used to synthesize thin layers of RexMo1minus;xSi2on Si(100). In the case ofx=1, ReSi2layers of excellent crystalline quality have been reported previously lsqb;J. E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, and M.hyphen;A. Nicolet, Appl. Phys. Lett.56, 2439 (1990)rsqb;. In the case ofx=0, however, virtually no alignment of the MoSi2and the substrate is found, although this silicide is nearly isomorphic to ReSi2. For intermediate values ofx, highly epitaxial ternary silicides are obtained, at least for a Mo fraction up to 1/3.