Graphane has a large band gap around 3.5 eV. In the situation of a vacant hydrogen atom, defect states appear in the energy gap, according to density functional calculation, and a local magnetic moment of 1 Bohr magneton is generated. Furthermore, if the vacancy is occupied by an atom from the transition-metals, not only do impurity levels make their presence in and out of the gap region but larger moment can also occur as a result. The calculation also shows that the doped structures are robust and the choice of dopant can change the electrical conduction and magnetism greatly.
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机译:石墨烷在 3.5 eV 左右具有较大的带隙。在空氢原子的情况下,根据密度泛函计算,能隙中出现缺陷态,并产生1玻尔磁子的局域磁矩。此外,如果空位被来自过渡金属的原子占据,不仅杂质水平会进出间隙区域,而且还会因此发生更大的矩。计算结果还表明,掺杂结构具有鲁棒性,掺杂剂的选择可以极大地改变导电性和磁性。
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