Designing two-dimensional electron gases in GaAs/InGaAs/AlGaAs, delta-doped AlGaAs/GaAs, and AlGaAs/InGaAs/GaAs heterostructures for single electron transistor application

摘要

We have theoretically studied two types of two-dimensional electron gases (2DEGs) in GaAs/ InGaAs/AlGaAs and delta -doped-AlGaAs/GaAs heterostructures for single-electron transistor applications by self-consistently solving the Schrodinger and Poisson equations. Assuming the dominant effect of the ionized impurity scattering in determining the low-held carrier mobility, it has been shown that introducing an InGaAs layer to the conventional GaAs/AlGaAs heterostructure greatly increases the sheet density of the 2DEG and the corresponding carrier mobility. The delta -doped AlGaAs/GaAs and AlGaAs/InGaAs/GaAs heterostructures provide us with an even better control of the 2DEG with higher sheet density and carrier mobility. (C) 2001 American Institute of Physics. References: 10