X-ray characterization of buried allotaxially grown CoSi2 layers in Si(100)

摘要

An x-ray study of the interface morphology and lattice parameters of buried expitaxial CoSi2 layers in Si(100) is presented. Specular reflectivity, diffuse and crystal truncation rod scattering, together with grazing incidence diffraction yield detailed information about the interface quality and lattice mismatch. It turns out that the CoSi2 interfaces are considerably smoothened by an annealing step at 1150 degrees C. Also the in-plane correlation length of the roughness increases yielding laterally smoother interfaces. While the perpendicular lattice parameter is between that of a free relaxed and a pseudomorphic structure and a linear contraction as function of the annealing temperature is obtained, grazing incidence diffraction reveals the opposite effect for the in-plane lattice mismatch. (C) 1998 American Institute of Physics. S0021-8979(98)06711-5. References: 47