Effective gettering of gold in silicon at 900 °C by low‐current corona discharge

摘要

The application of microampere level corona generated currents at elevated temperatures in an argon atmosphere was found to indicate a rapid segregation of dissolved Au impurities out of the bulk of intentionally Au‐doped silicon wafers into the near surface regions on both sides of the wafers. Complete removal of the Au occurred in less than 15 min with a current of 5 mgr;A at 900 °C. A ‘‘kick‐out’’ mechanism due to the generation of Si interstitials is considered as a possible explanation for these results.