Hole perpendicular transport in GaAs-AlGaAs superlattices

摘要

We investigate the hole perpendicular transport properties in semiconductor superlattices (SLs)by using the extended Lei-Ting balance equation theory for an arbitrary energy band including hole-impurity, hole-polar-optic-phonon, and hole-nonpolar-optic-phonon scatterings. Effects of heavy-hole-light-hole mixing are taken into account by means of the approximate dispersion relation suggested by O. E. Raichev Phys. Rev. B 50, 5382 (1994). Numerical calculations show that the complex hole energy spectrum causes a breakdown of the negative differential conductance for the hot-hole perpendicular transport in SLs in contrast with the results corresponding to a simplified electronlike energy spectrum. #1997 American Institute of Physics. S0003-6951 (97)01207-2