Selenium implantation has been studied as a means of fabricatingnhyphen;type layers in Fehyphen;doped, semihyphen;insulating indium phosphide. Channeling measurements using 1.5hyphen;MeV He ions have shown that amorphous layers (about 0.1 mgr;m thick) are created by Se implantation at room temperature and these layers recrystallize after annealing at above 700thinsp;deg;C. Differential Hallhyphen;effect and sheethyphen;resistivity measurements have revealed that very shallow (0.1 mgr;m) and highly doped (nmax= sim;2times;1019/cm3)n+layers can be formed by implantation with 100hyphen;keV ions at room temperature and by subsequent annealing at 700thinsp;deg;C. Profile measurements have also indicated that Se ions implanted into elevated temperature InP tend to diffuse in the crystal during the implantation.
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