We report a 5 nm thick V-shaped AlGaAs/GaAs single quantum wire (QWR) that showed high photoluminescence (PL) thermal stability as a result of our recent progress in fabrication techniques. The integrated PL intensity of the QWR sample was quenched only by a factor of about 2.5 when the temperature was increased from 5 to 300 K. This sample also showed higher PL thermal stability over the whole temperature range than a 5 nm thick single quantum well reference sample grown under similar conditions.
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