Quantum efficiency of the internal photoelectric effect in silicon and germanium

摘要

The quantum efficiency of silicon and germanium has been measured for photon energies up to 6 eV for Si and 5.3 eV for Ge. Diodes have been constructed with unity collection coefficient in this spectral range. The observed quantum efficieny of silicon in the ultraviolet is much smaller than hitherto believed, i.e., a value of 1.50 is found at 6 eV. The results for Ge accidentally agree with Vavilov and Britsynrsquo;s measurements. An analysis of sources of error in quantumhyphen;efficiency measurements is given.