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首页> 外文期刊>journal of applied physics >Deviations from Arrhenius behavior in the dark conductance of Inhyphen;doped CdS films
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Deviations from Arrhenius behavior in the dark conductance of Inhyphen;doped CdS films

机译:Deviations from Arrhenius behavior in the dark conductance of Inhyphen;doped CdS films

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摘要

The dark electrical conductivity sgr; of Inhyphen;doped CdS films does not show a simply activated behavior. Appreciable curvature is seen in graphs of logthinsp;sgr; vsTminus;1. This has been attributed to a temperaturehyphen;dependent activation energy or to a tendency of sgr; towards saturation at low temperatures. We suggest that it arises because, as the doping is reduced, the data tend to follow logthinsp;sgr;=constTrather than logthinsp;sgr;=constthinsp;Tminus;1. This linear temperature dependence of logthinsp;sgr; has also been seen for offhyphen;stoichiometric SiO2films, among other lowhyphen;conductivity solids, and we point out that it is a characteristic behavior which was anticipated more than 20 years ago in a model of quantum tunneling through a vibrating barrier.

著录项

  • 来源
    《journal of applied physics》 |1985年第2期|1054-1055|共页
  • 作者

    C. M. Hurd;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

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