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Influence of substrate temperature on epitaxial copper phthalocyanines studied by photoemission spectroscopy

机译:衬底温度对光发射光谱研究的外延铜酞菁的影响

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摘要

We report the formation of heteroepitaxial copper phthalocyanine (CuPc) overlayers on a "5×20" reconstructed Au(001) substrate, with thicknesses ranging from 0.8 to 26.9 A. The adsorbed CuPc at room temperature forms a quasiepitaxial overlayer, incommensurate with the substrate lattice, aligned with the 〈110〉 and 〈110〉 axes of the Au(001) surface. At elevated substrate temperatures (ET) between 200 and 250℃, the deposition of CuPc results in a 13.8 A square overlayer structure commensurate with the substrate lattice. The electronic structures of CuPc overlayers grown at both RT and ET are also investigated. While the films grown at both temperatures generally exhibit lowering of the vacuum level, consistent with the presence of an interfacial dipole, it is the ET-grown CuPc overlayer that exhibits a sharp decrease of the surface vacuum level upon completion of a monolayer. The experimental CuPc valence band energies are compared with the calculated ionization potentials of a CuPc molecule. Using the tunability of the light source and the dependence of the photoionization cross sections on photon energy for various atomic shells, the CuPc molecular orbitals are assigned with either Cu d states or Pc-derived valence orbitals.
机译:我们报道了在“5×20”重建的Au(001)衬底上形成异质外延铜酞菁(CuPc)层,厚度范围为0.8至26.9 A。在室温下吸附的CuPc形成与衬底晶格不相称的准外延层层,与Au(001)表面的〈110〉和〈110〉轴对齐。在200至250°C的衬底温度(ET)升高时,CuPc的沉积产生与衬底晶格相称的13.8 A方形覆盖层结构。还研究了在RT和ET下生长的CuPc层的电子结构。虽然在两种温度下生长的薄膜通常表现出真空度的降低,这与界面偶极子的存在一致,但ET生长的CuPc覆盖层在单层完成后表现出表面真空度的急剧降低。将实验CuPc价带能量与计算出的CuPc分子的电离电位进行比较。利用光源的可调性和光电离截面对各种原子壳层的光子能量的依赖性,CuPc分子轨道被分配了Cu d态或Pc衍生的价轨道。

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