Detailed measurements of polarizationhyphen;dependent gainhyphen;current characteristics have been carried out on (111)hyphen; and (100)hyphen;oriented GaAs/AlGaAs singlehyphen;quantumhyphen;well lasers by using Hakki and Paolirsquo;s method. Polarizationhyphen;dependent gainhyphen;current characteristics have been found to strongly depend on the well width and the quantization direction. The saturation of gain with the injection current and the width of the gain spectrum depends on the well width, and they are also affected by the transition between the higherhyphen;order subbands. Experimental results of polarizationhyphen;dependent spontaneous emission are also presented. The simple selection rule and the effectivehyphen;mass theories do not quantitatively account for the experimental results.
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