Deep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have been characterized by optical transient current spectroscopy (OTCS). Compared with the OTCS result of the SI InP prepared by annealing in pure phosphorus (PP) ambiance, the IP SI InP presents only two traps with activation energies of 0.20 and 0.63 eV, respectively. The results suggest that the diffusion of Fe-atoms suppresses the formation of a few defects in the IP SI InP. The nature of deep levels in the IP and PP SI InP has been discussed on the basis of these results. The relation between material property and defects in those SI InP has also been revealed.
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机译：通过光学瞬态电流谱 （OTCS） 表征了在磷化铁 （IP） 环境中退火获得的半绝缘 （SI） InP 中的深层水平。与纯磷（PP）环境下退火制备的SI InP的OTCS结果相比，IP SI InP仅存在两个活化能分别为0.20和0.63 eV的陷阱。结果表明，Fe原子的扩散抑制了IP SI InP中一些缺陷的形成。基于这些结果，已经讨论了 IP 和 PP SI InP 中深层次的性质。材料特性与这些SI InP缺陷之间的关系也被揭示出来。
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