Silver recoil yield resulting from krypton implantation

摘要

The number of silver atoms which is recoil implanted into silicon during implantation of 255‐keV krypton is investigated as a function of silver film thickness and krypton dose using helium Rutherford backscattering. Results are in good agreement with calculations based on a Boltzmann transport equation approach. These calculations verify that the secondary and higher‐order recoils play a significant role in determining the total yield.