Determination of the density of states at the Fermi level of hydrogenated amorphous silicon in thinhyphen;film transistor structure by space charge limited current measurement

摘要

We studied the space charge limited current effect in hydrogenated amorphous silicon (ahyphen;Si:H) thinhyphen;film transistors (TFTs). We demonstrate that the drain current is space charge limited when the sourcehyphen;drain voltage is large and the gate voltage is small. Using this space charge limited current we determined the density of states in the gap ofahyphen;Si:H inahyphen;Si:H TFT. thinsp;