The effects of heat treatment on the electrical properties of strained-Si SiGe-on-insulator (SGOI) substrate as well as silicon-on-insulator (SOI) were examined. Furthermore, we proposed the optimized heat treatment processes for improving the interface properties of SGOI substrate and the electrical characteristics of SGOI MOSFET with a strained-Si channel. Both pre-rapid thermal process (RTF) and post-RTA annealing (PRA) are inevitable to obtain enhanced DC characteristics in strained Si SGOI n-MOSFET.
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