首页> 外文期刊>journal of applied physics >Transmission electron microscopy analysis of ‘‘black belt:’’ The masking film of white ribbon of Kooi effect in the local oxidation of silicon process
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Transmission electron microscopy analysis of ‘‘black belt:’’ The masking film of white ribbon of Kooi effect in the local oxidation of silicon process

机译:“黑带”的透射电子显微镜分析:Kooi效应的白带掩蔽膜在硅的局部氧化过程中

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摘要

The first direct observation of the top view of micromasking film on the Si surface to gate oxidation in the local oxidation of silicon process with transmission electron microscopy (TEM) has been made. The micromasking film looks like an ‘‘eyelash’’ in cross‐sectional transmission electron microscopy and like a ‘‘black belt’’ in top view TEM. In addition, direct and sequential TEM observations on the removal of the micromasking film by sacrificial oxidation were presented.
机译:首次用透射电子显微镜(TEM)直接观察了硅局部氧化过程中硅表面微掩膜的顶视图,以栅极氧化。在横截面透射电子显微镜中,微掩膜看起来像一根“睫毛”,在俯视透射电镜中看起来像一条“黑带”。此外,还介绍了通过牺牲氧化去除微掩膜的直接和连续TEM观察。

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