The effect of uniaxial mechanical stress on the Hall coefficient ofnhyphen;type silicon has been measured for various crystallographic orientations, and piezohyphen;Hall coefficientsP12andP11hyphen;P44have been derived for electron concentrationsnbetween 1014and 1016cmminus;3and temperatures ranging from minus;80 to +100thinsp;deg;C. In this range the piezohyphen;Hall effect is found to be as important as the piezoresistance effect which is understood in terms of the manyhyphen;valley band structure of silicon with anisotropic energy minima. For Hall plates in the (100) and the (110) plane of silicon the resulting longitudinal and transverse piezohyphen;Hall coefficients at room temperature are plotted as a function of their orientation in the plane. It turns out that the piezohyphen;Hall as well as the piezoresistance effects are minimized for a Hall plate in the (110) plane with the current flow roughly parallel to lang;11macr;1rang;.
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