The surface energy of various planes in Si, GaAs, and GaP was measured by the use of a modified spark discharge method, previously used successfully in metals. Surface energy values were determined for the following cleavage planes in these crystals: Si {111}∼1.14 J/m2, Si {110}∼1.9 J/m2, GaAs {110}∼0.86 J/m2, and GaP {110}∼1.9 J/m2. The Si surface energy value was compared with previous experimental measurements. The Si {110}, GaAs {110}, and GaP {110} values were compared only to theoretical estimations, since as far as it is known, the surface energy of these planes have never been measured experimentally. Berg‐Barrett x‐ray topography and chemical etch pit analysis verified that plastic relaxation did not occur under the test conditions used. The cleavage surface energies determined in this work were in good agreement with previous theoretical estimations. Experimental observations confirmed a lack of plastic energy dissipation and a stability of cleavage propagation which indicated that the measured surface energies were close to the intrinsic values.
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机译：Si、GaAs和GaP中各种平面的表面能是通过使用改进的火花放电方法测量的，该方法以前已成功用于金属。确定了这些晶体中以下解理面的表面能值：Si {111}∼1.14 J/m2、Si {110}∼1.9 J/m2、GaAs {110}∼0.86 J/m2 和 GaP {110}∼1.9 J/m2。将Si表面能值与先前的实验测量值进行了比较。Si {110}、GaAs {110} 和 GaP {110} 值仅与理论估计值进行比较，因为据了解，这些平面的表面能从未通过实验测量过。Berg‐Barrett x‐射线形貌和化学蚀刻坑分析证实，在所使用的测试条件下不会发生塑性松弛。本文确定的解理表面能与先前的理论估计结果吻合较好。实验观察证实了缺乏塑性能量耗散和解理传播的稳定性，这表明测得的表面能接近本征值。
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