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首页> 外文期刊>journal of applied physics >Comments on lsquo;lsquo;An analytical study of thephyphen;njunction spacehyphen;charge region under high forward voltagersquo;rsquo; lsqb;J. Appl. Phys.62, 948 (1987)rsqb;
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Comments on lsquo;lsquo;An analytical study of thephyphen;njunction spacehyphen;charge region under high forward voltagersquo;rsquo; lsqb;J. Appl. Phys.62, 948 (1987)rsqb;

机译:Comments on lsquo;lsquo;An analytical study of thephyphen;njunction spacehyphen;charge region under high forward voltagersquo;rsquo; lsqb;J. Appl. Phys.62, 948 (1987)rsqb;

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摘要

The recent findings of Park, Lindholm, and Neugroschel lsqb;J. Appl. Phys.62, 948 (1987)rsqb; regarding the depletion capacitance ofphyphen;njunctions of the symmetricalhyphen;step type and of the linearly graded type under highhyphen;forward voltage are compared to the results of an earlier analysis of the same subject. The difference in the method of solution and the role of a characteristic length in linearly graded junctions is briefly discussed.

著录项

  • 来源
    《journal of applied physics 》 |1989年第12期| 6188-6188| 共页
  • 作者

    J. J. H. van den Biesen;

  • 作者单位
  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

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