Interfacial solidhyphen;state reaction at thermally oxidized In1minus;xGaxAsyP1minus;yalloys

摘要

The interfacial reaction between thermally oxidized In1minus;xGaxAsyP1minus;yand an In1minus;xGaxAsyP1minus;yepilayer was studied using Raman and xhyphen;ray photoelectron spectroscopy (XPS) analyses. In Raman spectra, it was found that the appearance of the phonon modes, i.e., the firsthyphen;order longitudinal (LO) and transversehyphen;optical (TO) modes for crystalline arsenic, was due to the In1minus;xGaxAsyP1minus;yhyphen;oxide interfacial reaction. The XPS analyses showed that this reaction corresponded to the GaAshyphen;oxide interfacial reaction, i.e., As2O3+2GaAsrarr;Ga2O3+4As. Furthermore, the reaction depends on the compositionyof In1minus;xGaxAsyP1minus;y, which may be due to the enhancement in the initial transient reaction by thermal damage of In1minus;xGaxAsyP1minus;yoccurring at the interface.