Characteristcs of carbon films prepared by plasma-based ion implantation

摘要

A eries of carbon films have been prepared by plasma-based ion implantation (PBII) with C on pure Al and Si.Emphasis has been placed on the effect of implanting voltage on teh characteristics of these films.The structures of the films were analyzed by X-ray photoelectron spectroscopy(XPS) and Raman Spectroscopy.The results indicate that the characteristics of these films are strongly dependent on the implnting voltage.an implanting voltage voltage threshold value ranging from 3 to 5 KV starts to form a C-substrate transition layer owing to C~+ ions implanted into the substrate.The transition layer exhibits a gradual change in composition and structure and effectively connects the carbon film and the sustrate.Also,an implanting voltage threshold value ranging from 5 to 10 KV starts to form diamond-like carbon(DLC) films.An icnreasing voltage causes the resultant DLC films to be smoother and more compact.Moreover,Raman Spectrum,chemical state of C1s,surface hardness and electrica resistivity all prove an optimum voltage of approximately 30 KV corresponding to the lowest ration of sp~2/Sp~3.