The effect of periods on the accumulation and release of stress in GaAs/AlInAs superlattices structure is reported here. It is observed that in GaAs/AlInAs superlattices, when the Indium (In) content is greater than 10, stress accumulates monotonically as the number of period increases. In GaAs/AlInAs superlattices with an In content of 5, the accumulated stress is larger when the number of periods is less than 10. However when the number of periods exceeds 10, it was observed that suddenly there is a significant increase in defects and stress release. However, with any further increase in period number, there is once again an accumulation of stress.
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Department of Electronic and Photonic Systems Engineering, Faculty of Engineering, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kamigun, Kochi 782-8502, Japan;
