Structural and electrical properties of low-temperature-grown Al(As,Sb)

摘要

We have investigated structural and electrical properties of Al(As,Sb) dual-anion compounds grown by molecular beam epitaxy at low substrate temperature. We find single-crystal growth down to substrate temperatures as low as 275℃. Additional donor-type defects form when Al(As,Sb) is grown at 450℃ or less, with the defect density increasing with decreasing substrate temperature. We find no evidence for the formation of precipitates upon annealing low-temperature-grown (LTG) Al(As,Sb) in contrast to LTG arsenides. # 1997 American Institute of Physics. S0003-6951 (97)01950-5