The photoelectromagnetic effect and photoconductivity measurements at room temperature in HgI2single crystals are reported for the first time. The sublinear dependence of these effects on the incident light intensity suggests the occurrence of trapping effects; this is taken into account by modifying the already developed calculations and introducing an rsquo;rsquo;effective lifetimersquo;rsquo; tgr;ast; and an rsquo;rsquo;effective diffusion lengthrsquo;rsquo;Last;. These two parameters are related to the electron and hole lifetimes. tgr;ast; andLast; are calculated by the experimental data and they are dependent on the incident light intensity with a minus;1/3 power dependence; at an incident photon flux of 1015photonthinsp;cmminus;2thinsp;secminus;1we found tgr;ast;=9times;10minus;8sec andLast;=6times;10minus;5cm.
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