Silicon nitride films prepared using a SiH4/NH3microwave multipolar plasma

摘要

Silicon nitride films have been prepared at room temperature using a microwave multipolar plasma chemical vapor deposition system.Insitukinetic ellipsometry during deposition andexsitumeasurements such as infrared absorption or spectroscopic ellipsometry have been used to investigate the dependence of film composition and properties on the flow ratio SiH4/NH3and on the total pressure. Depending on the silane partial pressure, the films contain a variable amount of oxygen or amorphous silicon which directly affects the electrical properties.