Electron mobility in In0.5Ga0.5P

摘要

The Hall mobility of electrons is calculated for In0.5Ga0.5P by using the experimental values of the effective mass and the band gap, and the estimated values of other constants. The experimental results are explained by taking the alloy scattering potential and the acoustic phonon deformation potential to be 0.435 and 12 eV, respectively. It is concluded that the experimental samples had impurity concentrations lying mostly between 5 and 15 times the electron concentration. (C) 1998 American Institute of Physics. S0021-8979(98)05311-0. References: 20