The impact ionization probability functions, P(x), are effectively histograms of the positions carriers ionize along the field direction, x, which determine the avalanche multiplication properties of a semiconductor device. In this work, we use a Monte Carlo model to investigate the form of these as multidimensional functions; in not just x, but also of the elapsed time, t, and the distance traveled perpendicular to the electric field direction, y. Despite most previous temporal calculations of the avalanche process assuming that all carriers travel at the drift velocity, v(d), it is shown that electrons which ionize at the shortest distances travel several times faster than v(d). There is also a significant spread in possible velocities with which ionizing carriers travel along the x direction due to diffusion. Diffusive spreading of the ionization probability in both x and y is also described. (C) 2001 American Institute of Physics. References: 30
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机译:冲击电离概率函数 P(x) 实际上是载流子沿场方向电离的位置 x 的直方图,它决定了半导体器件的雪崩倍增特性。在这项工作中,我们使用蒙特卡罗模型来研究这些作为多维函数的形式;不仅在 x 中,而且在经过的时间 T 和垂直于电场方向的行进距离 y 中。尽管以前对雪崩过程的大多数时间计算都假设所有载流子都以漂移速度 v(d) 行进,但表明在最短距离内电离的电子行进速度比 v(d) 快几倍。由于扩散,电离载流子沿 x 方向行进的可能速度也存在显着扩散。还描述了电离概率在 x 和 y 中的扩散扩散。(C) 2001年美国物理研究所。[参考文献: 30]
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