Novel high‐speed transistor using electron‐wave diffraction

摘要

A new class of devices consisting of a heterojunctionnpntransistor with a wavelength modulator and a transversal potential grating in the base region is proposed. An electron injected at high energy into the base region is modulated in wavelength due to acceleration by a signal voltage and its transmission to the collector is controlled through diffraction caused by the grating. Diffraction characteristics are analyzed to reveal the possibility of high transconductances. Furthermore, a reduced transit time, which is due to the constant flow of high‐energy and collision‐free electrons and an extremely small capacitance between the modulation electrodes, provides significant potential for high‐speed logic applications.