Charge transport properties of epitaxial indium phosphide films deposited on semihyphen;insulating singlehyphen;crystal InP:Fe substrates by metalhyphen;organic chemical vapor deposition were investigated by means of Hall effect and resistivity measurements made over a range of temperature from sim;420thinsp;deg;K down to liquidhyphen;nitrogen temperature. The activation energies characteristic of both undoped and acceptorhyphen;doped films were found from the variation of carrier concentration in the films with sample temperature. For undopednhyphen;type InP films grown on InP:Fe substrates of the three orientations (100), (111A), and (111B) very small activation energies, ranging from 0.006 to 0.009 eV, were found, although some evidence of deeper levels was also obtained. Znhyphen;doped and Cdhyphen;doped InP films were also characterized. The activation energy of Zn inphyphen;type InP was 0.023 eV for (100)hyphen; and (111B)hyphen;oriented films, and Cd energies were 0.049 eV for (100)hyphen;oriented films and 0.067 eV for (111A)hyphen;oriented films.
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