Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNyunder rapid thermal annealing

摘要

Thin Ti films sputter deposited onto single‐crystal Si, thermal SiO2, and low‐pressure chemical vapor deposited Si3N4and SiOxNy(x≊y≊1) substrates have been rapid thermal annealed in N2or Ar, with and without an amorphous Si overlayer, and the reactions followed using Auger elecron spectroscopy, transmission electron microscopy, electron diffraction, and sheet resistance measurements. A multilayer film is created in practically every case with each layer containing essentially a single reaction product, viz.,TiSix, TiOx, dgr;‐TiN, or TiNxO1−x. The results are discussed in light of published Ti‐Si‐O and Ti‐Si‐N phase diagrams.