Physical Origin of Stress-Induced Leakage Currents in Ultra-Thin Silicon Dioxide Films

摘要

Physical origin of stress-induced leakage currents (SILC) in ultra-thin SiO{sub}2 films is described. Assuming a two-step trap-assisted tunneling process accompanied with an energy relaxation process of trapped electrons, conditions of trap sites which are origin of SILC are quantitatively found. It is proposed that the trap site location and the trap state energy can be explained by mean-free-path of hole in SiO{sub}2 films and atomic structure of trap site by O vacancy model.