Gallium arsenide crystalline nanorods grown by molecular-beam epitaxy

摘要

Gallium arsenide (GaAs) crystalline nanorods were grown by molecular-beam epitaxy (MBE). Scanning electron microscopy, transmission electron microscopy, and energy dispersive x-ray fluorescence measurements showed that the grown GaAs nanorods were straight single crystals with diameters between 70 and 80 nm, lengths of up to 5 μm, and were doped with Si impurity. The formation mechanism of the Si-doped GaAs crystalline nanorods is described. These results indicate that Si-doped GaAs crystalline nanorods can be grown by using the MBE technique and that the nanorods hold promise for potential applications in next-generation electronic and optoelectronic devices.