Dark line defect growth in optically pumped AlxGa1minus;xAs laser material

摘要

The growth of dark line defects (DLDrsquo;s) has been observed in epitaxial AlGaAs wafers under optical pumping. The growth velocity as a function of optical intensity is given byV=AI1.8. In addition to recombinationhyphen;enhanced defect motion, stresshyphen;induced dislocation glide is shown to contribute to the elongation of DLDrsquo;s in lang;100rang; and lang;110rang; directions. A climb mechanism may be responsible for the thickening of DLDrsquo;s after growth in lang;100rang; directions. The asymmetric growth of DLDrsquo;s between lang;110rang; and lang;11macr;0rang; directions is attributed to the existence of agr; and bgr; dislocations and the absence of 90deg; rotational symmetry in the zinchyphen;blende structure.