Conduction-induced oxidation of silicon on silver metaphosphate glass

摘要

dc biasing of silicon-anoded silver metaphosphate glass with a pulse train enabled us to follow the process of conduction-induced oxidation of silicon. Biasing with 1000 or 500 V/cm at or below 140℃ induced formation of a dielectric oxide having capacitance of around 10~(-7) F cm~(-2). From a large relaxation time of polarization involved, e.g., 10~(-4) s at 140℃, it is suggested that the oxide is not the genuine silicon dioxide.