The effective bond‐orbital model is used to calculate the conduction‐ and valence‐subband structures and optical matrix elements of recently grown epitaxially buried GaAs/AlGaAs/AlAs quantum‐wire arrays. Band mixing, band anisotropy, and lateral intermixing of Ga and Al during growth strongly affect the energy levels and features in the optical data. Strong anisotropy in the optical properties is predicted for the case of perfect lateral interfaces while for cases with significant lateral intermixing, the optical properties show weak anisotropy. Our results are compared with the observed photoluminescence excitation spectra.
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