Evidence of interface trap creation by hothyphen;electrons in AlGaAs/GaAs high electron mobility transistors

摘要

We report on the hothyphen;electrons induced degradation in AlGaAs/GaAs high electron mobility transistors (HEMTs), consisting of a decrease in the drain current and an increase in the parasitic drain resistance. The amount of the degradation is proportional to the impacthyphen;ionization rate which is related to the electron energy. Transconductance dispersion measurements and drain current deep level transient spectroscopy (DLTS) have been used to identify interface traps which are located at the AlGaAs/GaAs interface in the gatehyphen;drain access region and are the causes of the observed degradation. copy;1996 American Institute of Physics.