Heavyhyphen;doping effects and impurity segregation during highhyphen;pressure oxidation of silicon

摘要

Silicon samples which were ionhyphen; implanted with boron or arsenic were oxidized in highhyphen;pressure (10 atm) pyrogenic steam to determine the effects of heavy doping on the oxide growth rate. Heavynhyphen;type doping (arsenic) was found to enhance the silicon oxidation rate, but the enhancement was not as great as for oxidation at atmospheric pressure. Forphyphen;type (boron) doping there was only slight enhancement for both highhyphen;pressure and 1hyphen;atm oxidations. Samples were then depth profiled using secondaryhyphen;ion mass spectroscopy (SIMS) to observe the segregation of boron and arsenic at the Si:SiO2interface. The effective coefficients of the impurities for highhyphen;pressure oxidation were found to deviate significantly from those for atmospheric pressure oxidation.