High‐power broad‐area lasers fabricated by selective area growth

摘要

High‐power broad‐area stripe lasers have been fabricated by using a one‐step selective area growth technique in the metalorganic chemical vapor deposition system. This technique provides devices with excellent control both on electrical and optical confinements. cw output power of more than 350 mW/facet (700 mW total) was achieved, and a differential quantum efficiency of 0.625 mW/mA/facet (1.25 mW/mA total) was observed.